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| Si7390DP New Product Vishay Siliconix N-Channel 30-V (D-S) Fast Switching WFET(R) PRODUCT SUMMARY VDS (V) 30 rDS(on) () 0.0095 @ VGS = 10 V 0.0135 @ VGS = 4.5 V ID (A) 15 13 FEATURES * Extremely Low Qgd WFET Technology for Low Switching Losses * TrenchFET(R) Power MOSFET * New Low Thermal Resistance PowerPAK(R) Package with Low 1.07-mm Profile * 100 % Rg Tested Available RoHS* COMPLIANT APPLICATIONS PowerPAK SO-8 6.15 mm S 1 2 3 S S 5.15 mm * High-Side DC/DC Conversion - Notebook - Server - Workstation * Point-of-Load Conversion D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SI7390DP-T1 SI7390DP-T1--E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation a Symbol VDS VGS TA = 25C TA = 70C ID IDM IS TA = 25C TA = 70C PD TJ, Tstg 10 secs 30 20 15 12 50 4.1 5 3.2 Steady State Unit V 9 7 1.5 1.8 1.1 -55 to 150 260 A W C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) t 10 sec Steady State Steady State Symbol RthJA RthJC Typical 20 53 2.1 Maximum 25 70 3.2 Unit C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72214 S-51773-Rev. C, 31-Oct-05 www.vishay.com 1 Si7390DP Vishay Siliconix New Product SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/s VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, RG = 6 0.2 VDS = 15 V, VGS = 4.5 V, ID = 15 A 10 3.5 2.1 0.8 16 7 43 14 35 1.4 30 12 70 25 60 ns 15 nC a Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Test Condition VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VDS = 15 V, ID = 15 A IS = 4.1 A, VGS = 0 V Min 0.8 Typ Max 3.0 100 1 5 Unit V nA A A 40 0.0075 0.0105 45 0.7 1.1 0.0095 0.0135 S V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C unless noted 50 VGS = 10 thru 4 V 40 40 I D - Drain Current (A) 50 I D - Drain Current (A) 30 3V 30 20 20 TC = 125C 10 25C -55C 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72214 S-51773-Rev. C, 31-Oct-05 Si7390DP New Product TYPICAL CHARACTERISTICS 0.030 r DS(on) - On-Resistance ( ) Vishay Siliconix 1800 Ciss 25 C unless noted C - Capacitance (pF) 0.024 1500 1200 0.018 VGS = 4.5 V 0.012 VGS = 10 V 0.006 900 Coss 600 Crss 300 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12.5 A r DS(on) - On-Resistance (Normalized) 1.8 VGS = 10 V ID = 12.5 A Capacitance 5 1.6 4 1.4 3 1.2 2 1.0 1 0.8 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge 0.040 On-Resistance vs. Junction Temperature 50 I S - Source Current (A) TJ = 150C 10 r DS(on) - On-Resistance ( ) 0.032 0.024 ID = 12.5 A 1 TJ = 25C 0.016 0.008 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72214 S-51773-Rev. C, 31-Oct-05 www.vishay.com 3 Si7390DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 C unless noted 0.6 0.4 80 V GS(th) Variance (V) 0.2 -0.0 -0.2 -0.4 20 -0.6 -0.8 -50 ID = 250 A Power (W) 60 100 40 -25 0 25 50 75 100 125 150 0 0.01 0.1 TJ - Temperature (C) 1 10 Time (sec) 100 600 Threshold Voltage Single Pulse Power 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 0.1 10 s TC = 25C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Case 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 125C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72214 S-51773-Rev. C, 31-Oct-05 Si7390DP New Product TYPICAL CHARACTERISTICS 25 C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 Vishay Siliconix 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (sec) 10 - 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72214. Document Number: 72214 S-51773-Rev. C, 31-Oct-05 www.vishay.com 5 |
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